Journal of Photopolymer Science and Technology Site: Archive of past call for special issue papers

Special issues of the "Advanced Patterning Materials and Processes: Opportunities in Sub-10 nm Half Pitch Patterning and Beyond"

Volume 28, Number 6 (2015) 775- 782, Link to the J-Stage site (External site).

Tomoki Nagai (JSR Corp.), Takeo Watanabe (University of Hyogo), joined as guest editors

    

Journal of Photopolymer Science and Technology, Vol. 28 No. 6 (2015)

 


Call for Special Issue Papers



      We would like to invite you to submit a paper to the special issue of “Advanced Patterning Materials and Processes: Opportunities in Sub-10 nm Half Pitch Patterning and Beyond” in the Journal of Photopolymer Science and Technology, Vol. 28 No. 6 (2015).

      This special issue is trying to collect the review papers from the leading researchers and engineers of the fields of advanced patterning materials and processes. The editors hope to accept the papers that will guide your “Fantastic Voyage” to go to sub 10-nm half pitch.


Tomoki Nagai, JSR Corp.,   e-mail: Tomoki_Nagai @jsr.co.jp

Takeo Watanabe, University of Hyogo,  e-mail: takeo@lasti.u-hyogo.ac.jp


Guest editors




Special issues of the "Advanced Patterning Materials and Processes"

Volume 27, Number 6 (2014) 723- 755, Link to the J-Stage site (External site).

Seiji Nagahara (Tokyo Electron Ltd.), Masayuki Endo (Osaka University), joined as guest editors

    

Journal of Photopolymer Science and Technology, Vol. 27 No. 6 (2014)

 


Special Issue Preface


 

       Welcome to the special issue of “Advanced Patterning Materials and Processes in the Journal of Photopolymer Science and Technology,Vol. 27 No. 6 (2014).

 

       What are the next exciting topics in next advanced patterning material and processes? We would like to go on treasure hunting in patterning material and processes with readers of this journal. The progress in patterning technologies is continuing to realize better device performance per cost. The treasure to give the value in the device manufacturing could be found in materials and processes for EUV lithography, EB lithography, directed self-assembly (DSA), double/multiple patterning (DP/MP), nano-imprint lithography (NIL) or other new technologies.


       This special issue collected the review papers from the leading researchers and engineers of the fields of advanced patterning materials and processes. The editors hope that the papers will guide your adventure by showing the treasure map in the technology area.


       We would like to thank authors and reviewers who contributed to this special issue. We also would like to thank Prof. Minoru TSUDA, Editor-in-Chief and Founding Editor, Prof. Kenichiro NAKAMURA, Editor-in-Chief, Prof. Takashi KARATSU, Editor, for allowing us the opportunity to act as the guest editors of this special issue.


 

Seiji Nagahara,Tokyo Electron Ltd.   e-mail: seiji.nagahaqra@tel.com

Masayuki Endo, Osaka University   e-mail: endo-m @sanken.osaka-u.ac.jp




 Guest editors


Link to the Special issues of the "Directed Self Assembly (DSA) "

Volume 26, Number 6 (2013) 777- 839, Link to the J-Stage site (External site).

Takumi Ueno (Shinshu University), Seiji Nagahara (Tokyo Electron Ltd.) joined as guest editors

Journal of Photopolymer Science and Technology, Vol. 26 No. 6 (2013)

 


Special Issue Preface


Preface of Special Issue "Directed Self Assembly (DSA)" from the guest editors.

 

     Welcome to the special issue of the Journal of Photopolymer Science and Technology, Vol. 26 No. 6 (2013). We are pleased to present selected papers for Directed Self Assembly (DSA) in this issue as a main topic. DSA has been gaining a growing interest in application for semiconductor device or hard disk application. DSA is a complementary technique for many patterning technologies such as KrF, ArF, ArF immersion, EUV, EB lithographies, Nano Imprint Lithography (NIL) and multi patterning technologies. With guide patterns made by one of these lithography technologies, DSA patterns can be oriented as designed. DSA has an advantage in providing further pattern shrinkage from original guide patterns with better CD uniformity and reduced roughness. This year’s 30th International Conference of Photopolymer Science and Technology (ICPST-30, 2013) gathered seventeen papers on DSA. In addition, the conference had a DSA symposium with five panelists. The conference now works as a home for DSA material science and technology. Although the technology is now eagerly evaluated for introduction into semiconductor mass production, information which is required for understanding DSA behavior is scattered in many journals and many conferences. This issue aims to collect valuable information and latest research information mainly by review papers written by leading scientists and engineers. DSA has a long history in material and process research using phase separation. This issue tries to cover topics ranging from basic research in DSA materials to the application approach in real manufacturing of devices. Synthesis and characterization of appropriate DSA polymers are of interest for this issue. To understand DSA behavior, modeling of molecular behavior is very helpful and will be the topic of this issue. For the manufacturing of patterns, DSA process flows and process tools are key and will be treated as a topic of this issue. DSA process specific issues such as pattern defect consideration are also an interest of this issue.
     The editors believe that the valuable information in this issue will be an important reference source for scientists and engineers in DSA, and will contribute to the acceleration of DSA sciences and technology.
     We would like to thank all of the authors who contributed to this issue for their interest in publishing their research or reviews here in JPST. We also thank all the reviewers of this special issue for their support in reviewing the articles. Finally, we would like to thank Prof. Minoru Tsuda, Editor-in-Chief and Founding Editor, Prof. Kenichiro Nakamura, Editor-in-Chief, Prof. Takashi Karatsu, Editor and Prof. Masayuki Endo, Editor for allowing us the opportunity to act as the guest editors of this special issue.